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Ordering number : ENA1766
MCH3382
P-Channel Power MOSFET
–12V, –2A, 198m Ω , Single MCPH3
Features
http://onsemi.com
?
?
?
ON-resistance RDS(on)1=152m Ω (typ.)
1.2V drive
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--12
±9
--2
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--8
0.8
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7019A-003
Product & Package Information
? Package : MCPH3
? JEITA, JEDEC : SC-70, SOT-323
? Minimum Packing Quantity : 3,000 pcs./reel
2.0
0.15
MCH3382-TL-H
Packing Type : TL
Marking
3
0 to 0.02
QP
1
0.65
2
0.3
TL
Electrical Connection
3
1 : Gate
2 : Source
3 : Drain
1
MCPH3
2
Semiconductor Components Industries, LLC, 2013
July, 2013
61310PE TKIM TC00002668 No. A1766-1/7
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